Power F-MOS FETs
2SK2127
Silicon N-Channel Power F-MOS FET
s
Features
q
Avalanche energy capacity guaranteed: EAS > 130mJ
q
V
GSS
= ±30V guaranteed
q
High-speed switching: t
f
= 60ns
q
No secondary breakdown
unit: mm
4.6±0.2
2.9±0.2
s
Applications
4.1±0.2 8.0±0.2
Solder Dip
13.7
–0.2
q
Contactless relay
q
Diving circuit for a solenoid
q
Driving circuit for a motor
q
Control equipment
q
Switching power supply
s
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Symbol
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
V
DSS
V
GSS
I
D
I
DP
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
EAS
*
P
D
T
C
= 25°C
Ta = 25°C
Channel temperature
Storage temperature
T
ch
T
stg
*
L = 5mH, I
L
= 7.3A, V
DD
= 50V, 1 pulse
Parameter
nt
in
Symbol
ue
s
Electrical Characteristics
(T
C
= 25°C)
Drain to Source cut-off current
Gate to Source leakage current
I
DSS
I
GSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
oss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
Drain to Source breakdown voltage
Gate threshold voltage
V
DSS
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
M
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Pl
e
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
15.0±0.3
3.0±0.2
+0.5
M
Di ain
sc te
on na
tin nc
ue e/
d
φ3.2±0.1
9.9±0.3
1.2±0.15
1.45±0.15
0.75±0.1
2.6±0.1
0.7±0.1
2.54±0.2
5.08±0.4
Ratings
500
Unit
V
V
A
A
7
1 2 3
±30
±8
±16
130
50
2
1: Gate
2: Drain
3: Source
TO-220E Package
mJ
W
150
°C
°C
−55
to +150
Conditions
min
typ
max
0.1
±1
Unit
mA
µA
V
V
co
V
DS
= 400V, V
GS
= 0
I
D
= 1mA, V
GS
= 0
/D
is
V
GS
= ±30V, V
DS
= 0
500
ce
V
DS
= 25V, I
D
= 1mA
2
5
1
an
V
GS
= 10V, I
D
= 4A
V
DS
= 25V, I
D
= 4A
I
DR
= 8A, V
GS
= 0
0.7
5
Ω
S
en
3
nt
−1.6
V
ai
1200
160
70
30
pF
pF
pF
ns
ns
ns
ns
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 4A
V
DD
= 150V, R
L
= 37.5Ω
70
60
140
2.5
°C/W
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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