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2SD795R

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size238KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SD795R Overview

Transistor

2SD795R Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD795
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 40V(Min)
·Low
Collector-Emitter Saturation Voltage-
: V
CE(sat)
= 0.7V(Max) @I
C
= 2.0A
APPLICATIONS
·Designed
for audio frequency power amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
w
.cn
i
em
cs
.is
w
w
VALUE
50
UNIT
V
40
5
V
V
3.0
A
6.0
0.6
1.5
W
20
150
-55~150
A
A
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature Range
isc Website:www.iscsemi.cn

2SD795R Related Products

2SD795R 2SD795Q 2SD795P 2SD795E
Description Transistor Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow unknow
Base Number Matches 1 1 1 1
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