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2SK0663GQ

Description
Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-F2, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size203KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

2SK0663GQ Overview

Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-F2, 3 PIN

2SK0663GQ Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
ConfigurationSINGLE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)0.03 A
FET technologyJUNCTION
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2SK0663GQ Related Products

2SK0663GQ 2SK0663G 2SK0663GP 2SK0663GR 2SK0663GRL
Description Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-F2, 3 PIN Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-F2, 3 PIN Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-F2, 3 PIN Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-F2, 3 PIN JFET N-CH 30MA 150MW SMINI-3
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 -
Contacts 3 3 3 3 -
Reach Compliance Code unknow unknow unknow unknow -
ECCN code EAR99 EAR99 EAR99 EAR99 -
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE -
Configuration SINGLE SINGLE SINGLE SINGLE -
Minimum drain-source breakdown voltage 55 V 55 V 55 V 55 V -
Maximum drain current (ID) 0.03 A 0.03 A 0.03 A 0.03 A -
FET technology JUNCTION JUNCTION JUNCTION JUNCTION -
JESD-30 code R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 -
Number of components 1 1 1 1 -
Number of terminals 3 3 3 3 -
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified -
surface mount YES YES YES YES -
Terminal form FLAT FLAT FLAT FLAT -
Terminal location DUAL DUAL DUAL DUAL -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON -
Base Number Matches 1 1 1 1 -

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