2SK0663GP datasheet, PDF - EEWORLD Datasheet

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2SK0663GP: DescriptionSmall Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-F2, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size203KB，4 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SK0663GP Overview

Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-F2, 3 PIN

2SK0663GP Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SINGLE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	0.03 A
FET technology	JUNCTION
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

2SK0663GP Related Products

	2SK0663GP	2SK0663G	2SK0663GQ	2SK0663GR	2SK0663GRL
Description	Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-F2, 3 PIN	Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-F2, 3 PIN	Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-F2, 3 PIN	Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-F2, 3 PIN	JFET N-CH 30MA 150MW SMINI-3
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	-
Contacts	3	3	3	3	-
Reach Compliance Code	unknow	unknow	unknow	unknow	-
ECCN code	EAR99	EAR99	EAR99	EAR99	-
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	-
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	-
Minimum drain-source breakdown voltage	55 V	55 V	55 V	55 V	-
Maximum drain current (ID)	0.03 A	0.03 A	0.03 A	0.03 A	-
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION	-
JESD-30 code	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	-
Number of components	1	1	1	1	-
Number of terminals	3	3	3	3	-
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	YES	YES	YES	YES	-
Terminal form	FLAT	FLAT	FLAT	FLAT	-
Terminal location	DUAL	DUAL	DUAL	DUAL	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-
Base Number Matches	1	1	1	1	-

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