Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Objectid | 1454195219 |
package instruction | IN-LINE, R-PSIP-W3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
YTEOL | 0 |
Other features | LOW NOISE |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (ID) | 0.1 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSIP-W3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | DEPLETION MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | WIRE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |