2SK0198Q datasheet, PDF - EEWORLD Datasheet

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2SK0198Q: DescriptionSmall Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size49KB，3 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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2SK0198Q Overview

Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN

2SK0198Q Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SINGLE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	0.02 A
FET technology	JUNCTION
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Silicon Junction FETs (Small Signal)

2SK0198

(2SK198)

Silicon N-Channel Junction FET

For low-frequency amplification

0.40

+0.10

–0.05

Unit: mm

0.16

+0.10

–0.06

Features

High mutual conductance g

Low noise type

Mini-type package, allowing downsizing of the sets and automatic

insertion through the tape/magazine packing.

1.50

+0.25

–0.05

2.8

+0.2

–0.3

(0.95) (0.95)

1.9

±0.1

2.90

+0.20

–0.05

10˚

1.1

+0.2

–0.1

Drain to Source voltage

Gate to Drain voltage

Drain current

Gate current

Allowable power dissipation

Channel temperature

Storage temperature

DSX

GDO

stg

−30

150

−55

+150

°C

1: Source

2: Drain

3: Gate

0 to 0.1

Parameter

Symbol

Ratings

Unit

1.1

+0.3

–0.1

Absolute Maximum Ratings

25°C)

(0.65)

JEDEC: TO-236

EIAJ: SC-59

Mini3-G1 Package

Marking Symbol (Example): 1O

Electrical Characteristics

25°C)

Parameter

Drain to Source cut-off current

Gate to Source leakage current

Gate to Source cut-off voltage

Mutual conductance

Symbol

DSS*

GSS

GSC

Conditions

10 V, V

= −30

V, V

10 V, I

µA

10 V, I

0.5 mA, f

1 kHz

10 V, V

0, f

1 kHz

10 V, V

0, f

1 MHz

30 V, I

1 mA, G

80 dB

100 kΩ, Function

FLAT

−

0.1

min

0.5

typ

max

−100

−1.5

Unit

3.5

Input capacitance (Common Source) C

iss

Reverse transfer capacitance (Common Source) C

rss

Noise figure

DSS

rank classification

Runk

DSS

(mA)

0.5 to 3

1OP

2 to 6

1OQ

4 to 12

1OR

Marking Symbol

Note) The part number in the parenthesis shows conventional part number.

Publication date: January 2002

SJF00006BED

0.4

±0.2

5˚

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-

ment if any of the products or technologies described in this material and controlled under the

"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative character-

istics and applied circuit examples of the products. It does not constitute the warranting of industrial

property, the granting of relative rights, or the granting of any license.

(3) The products described in this material are intended to be used for standard applications or gen-

eral electronic equipment (such as office equipment, communications equipment, measuring in-

struments and household appliances).

Consult our sales staff in advance for information on the following applications:

•

Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,

combustion equipment, life support systems and safety devices) in which exceptional quality and

reliability are required, or if the failure or malfunction of the products may directly jeopardize life or

harm the human body.

•

Any applications other than the standard applications intended.

(4) The products and product specifications described in this material are subject to change without

notice for reasons of modification and/or improvement. At the final stage of your design, purchas-

ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to

make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-

mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-

wise, we will not be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, redundant design is recommended,

so that such equipment may not violate relevant laws or regulations because of the function of our

products.

(6) When using products for which dry packing is required, observe the conditions (including shelf life

and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.

(7) No part of this material may be reprinted or reproduced by any means without written permission

from our company.

Please read the following notes before using the datasheets

A. These materials are intended as a reference to assist customers with the selection of Panasonic

semiconductor products best suited to their applications.

Due to modification or other reasons, any information contained in this material, such as available

product types, technical data, and so on, is subject to change without notice.

Customers are advised to contact our semiconductor sales office and obtain the latest information

before starting precise technical research and/or purchasing activities.

B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but

there is always the possibility that further rectifications will be required in the future. Therefore,

Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-

pear in this material.

C. These materials are solely intended for a customer's individual use.

Therefore, without the prior written approval of Panasonic, any other use such as reproducing,

selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.

2001 MAR

2SK0198Q Related Products

	2SK0198Q	2SK0198R	RWR78S2641BPRSL
Description	Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN	RESISTOR, WIRE WOUND, 10 W, 0.1 %, 20 ppm, 2640 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
Is it Rohs certified?	conform to	conform to	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	Axial,
Reach Compliance Code	unknow	unknow	compliant
ECCN code	EAR99	EAR99	EAR99
Number of terminals	3	3	2
Maximum operating temperature	150 °C	150 °C	250 °C
Package form	SMALL OUTLINE	SMALL OUTLINE	Axial
surface mount	YES	YES	NO
Parts packaging code	SOT-23	SOT-23	-
Contacts	3	3	-
Other features	LOW NOISE	LOW NOISE	-
Configuration	SINGLE	SINGLE	-
Minimum drain-source breakdown voltage	30 V	30 V	-
Maximum drain current (ID)	0.02 A	0.02 A	-
FET technology	JUNCTION	JUNCTION	-
JEDEC-95 code	TO-236	TO-236	-
JESD-30 code	R-PDSO-G3	R-PDSO-G3	-
Number of components	1	1	-
Operating mode	DEPLETION MODE	DEPLETION MODE	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Maximum power dissipation(Abs)	0.15 W	0.15 W	-
Certification status	Not Qualified	Not Qualified	-
Terminal form	GULL WING	GULL WING	-
Terminal location	DUAL	DUAL	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-
Base Number Matches	1	1	-

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