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RFD12N06RLESM9A

Description
Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
CategoryDiscrete semiconductor    The transistor   
File Size121KB,2 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
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RFD12N06RLESM9A Overview

Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

RFD12N06RLESM9A Parametric

Parameter NameAttribute value
MakerHarris
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresMEGAFET, LOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.135 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)26 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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