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PUMD48,125

Description
100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size931KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PUMD48,125 Overview

100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR

PUMD48,125 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTSSOP
Contacts6
Manufacturer packaging codeSOT363
Reach Compliance Codecompli
Minimum DC current gain (hFE)80
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Polarity/channel typeNPN/PNP
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceTin (Sn)
Transistor component materialsSILICON

PUMD48,125 Related Products

PUMD48,125 PEMD48,115 PUMD48,115 PUMD48,165
Description 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Brand Name NXP Semiconduc NXP Semiconduc NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to conform to conform to
Maker NXP NXP NXP NXP
Parts packaging code TSSOP SOT TSSOP TSSOP
Contacts 6 6 6 6
Manufacturer packaging code SOT363 SOT666 SOT363 SOT363
Reach Compliance Code compli compli compli compli
Minimum DC current gain (hFE) 80 80 80 80
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 2 2 2 2
Polarity/channel type NPN/PNP NPN AND PNP NPN AND PNP NPN AND PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W
surface mount YES YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Transistor component materials SILICON SILICON SILICON SILICON
package instruction - PLASTIC PACKAGE-6 PLASTIC, SC-88, 6 PIN PLASTIC, SC-88, 6 PIN
ECCN code - EAR99 EAR99 EAR99
Other features - BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 21.36
Maximum collector current (IC) - 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage - 50 V 50 V 50 V
Configuration - SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
JESD-30 code - R-PDSO-F6 R-PDSO-G6 R-PDSO-G6
Number of terminals - 6 6 6
Maximum operating temperature - 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED 260 260
Certification status - Not Qualified Not Qualified Not Qualified
Terminal form - FLAT GULL WING GULL WING
Terminal location - DUAL DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED 40 40
transistor applications - SWITCHING SWITCHING SWITCHING

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