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PEMD48,115

Description
100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size931KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PEMD48,115 Overview

100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR

PEMD48,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT
package instructionPLASTIC PACKAGE-6
Contacts6
Manufacturer packaging codeSOT666
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN AND PNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

PEMD48,115 Related Products

PEMD48,115 PUMD48,115 PUMD48,125 PUMD48,165
Description 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Brand Name NXP Semiconduc NXP Semiconduc NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to conform to conform to
Maker NXP NXP NXP NXP
Parts packaging code SOT TSSOP TSSOP TSSOP
Contacts 6 6 6 6
Manufacturer packaging code SOT666 SOT363 SOT363 SOT363
Reach Compliance Code compli compli compli compli
Minimum DC current gain (hFE) 80 80 80 80
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 2 2 2 2
Polarity/channel type NPN AND PNP NPN AND PNP NPN/PNP NPN AND PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W
surface mount YES YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Transistor component materials SILICON SILICON SILICON SILICON
package instruction PLASTIC PACKAGE-6 PLASTIC, SC-88, 6 PIN - PLASTIC, SC-88, 6 PIN
ECCN code EAR99 EAR99 - EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 - BUILT IN BIAS RESISTANCE RATIO IS 21.36
Maximum collector current (IC) 0.1 A 0.1 A - 0.1 A
Collector-emitter maximum voltage 50 V 50 V - 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR - SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
JESD-30 code R-PDSO-F6 R-PDSO-G6 - R-PDSO-G6
Number of terminals 6 6 - 6
Maximum operating temperature 150 °C 150 °C - 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 - 260
Certification status Not Qualified Not Qualified - Not Qualified
Terminal form FLAT GULL WING - GULL WING
Terminal location DUAL DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED 40 - 40
transistor applications SWITCHING SWITCHING - SWITCHING
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