PBSS2515YPN,115 datasheet, PDF

PBSS2515YPN,115: Description15 V low VCEsat NPN/PNP transistor; CategoryDiscrete semiconductor The transistor; File Size100KB，11 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PBSS2515YPN,115 Overview

15 V low VCEsat NPN/PNP transistor

Parameter Name	Attribute value
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	TSSOP
package instruction	PLASTIC, SC-88, 6 PIN
Contacts	6
Manufacturer packaging code	SOT363
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	15 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN AND PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	420 MHz

	PBSS2515YPN,115	PBSS2515YPN
Description	15 V low VCEsat NPN/PNP transistor	15 V low VCE(sat) NPN/PNP transistor
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
Parts packaging code	TSSOP	SC-88
package instruction	PLASTIC, SC-88, 6 PIN	PLASTIC, SC-88, 6 PIN
Contacts	6	6
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	15 V	15 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	200	200
JESD-30 code	R-PDSO-G6	R-PDSO-G6
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	2	2
Number of terminals	6	6
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN AND PNP	NPN AND PNP
Maximum power dissipation(Abs)	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	420 MHz	420 MHz

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