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2SA1301R

Description
TRANSISTOR 12 A, 160 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size89KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SA1301R Overview

TRANSISTOR 12 A, 160 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power

2SA1301R Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)12 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)55
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
Base Number Matches1

2SA1301R Related Products

2SA1301R 2SA1301O
Description TRANSISTOR 12 A, 160 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power TRANSISTOR 12 A, 160 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 12 A 12 A
Collector-emitter maximum voltage 160 V 160 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 55 80
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 30 MHz 30 MHz
Base Number Matches 1 1
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