MBR845D datasheet, PDF - EEWORLD Datasheet

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MBR845D: DescriptionSchottky diodes; CategoryDiscrete semiconductor diode; File Size99KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR845D Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: MBR845D

parameter:

Repetitive reverse voltage peak Vrrm: 45V

Maximum average rectified current Io: 8A

Maximum forward surge current I FSM: 150A

Forward voltage drop VF: 0.7V when IF=8A

Maximum feedback current IR: 50uA when VR=45V

Package: TO-263/D2PAK

MBR845D Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	D2PAK
package instruction	ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3
Contacts	4
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	45 V
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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MBR840D~MBR8200D

PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• In compliance with EU RoHS 2002/95/EC directives

40 to 200 Volts

CURRENT

8 Ampere

MECHANICALDATA

• Case: TO-263/D

PAK molded plastic package

• Terminals: Lead solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Mounting Position: Any

• Weight: 0.0514 ounces, 1.46 grams.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.

PA RA M E TE R

M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e

M a xi m um R M S V o l t a g e

M a xi m um D C B l o c k i ng V o l t a g e

M a xi m um A ve r a g e F o r w a r d ( S e e F i g ur e 1 )

P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -

w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )

M a xi m um F o r w a r d V o l t a g e a t 8 . 0 A

M a xi m um D C R e ve r s e C ur r e nt T

= 2 5

a t R a t e d D C B l o c k i ng V o l t a g e T

= 1 0 0

Ty p i c a l T h e r m a l R e s i s t a n c e

O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e

S YM B O L

RRM

RMS

F ( A V )

F S M

J C

, T

S TG

MB R8 4 0 D

MB R8 4 5 D MB R8 5 0 D MB R8 6 0 D MB R8 8 0 D MB R8 9 0 D MB R8 1 0 0 D MB R8 1 5 0 D MB R8 2 0 0 D

U N IT S

31.5

150

100

150

105

150

200

140

200

0 .7 0

0 .7 5

0 .0 5

0 .8 0

0.90

C / W

-5 5 to +1 5 0

-65 to +175

NOTES : Both Bonding and Chip structure are available.

STAD-APR.30.2009

PAGE . 1

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