65 V, 100 mA NPN/PNP general-purpose transistor
| Parameter Name | Attribute value |
| Brand Name | NXP Semiconduc |
| Is it Rohs certified? | conform to |
| Maker | NXP |
| Parts packaging code | TSSOP |
| package instruction | SMALL OUTLINE, R-PDSO-G6 |
| Contacts | 6 |
| Manufacturer packaging code | SOT363 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 65 V |
| Configuration | SEPARATE, 2 ELEMENTS |
| Minimum DC current gain (hFE) | 200 |
| JESD-30 code | R-PDSO-G6 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 2 |
| Number of terminals | 6 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | NPN AND PNP |
| Maximum power dissipation(Abs) | 0.3 W |
| Guideline | AEC-Q101 |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 100 MHz |
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