2SK1151(S)-(3) datasheet, PDF - EEWORLD Datasheet

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2SK1151(S)-(3): DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size58KB，11 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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2SK1151(S)-(3) Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

2SK1151(S)-(3) Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Configuration	Single
Maximum drain current (Abs) (ID)	1.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	20 W
surface mount	YES
Base Number Matches	1

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2SK1151(L)(S), 2SK1152(L)(S)

Silicon N-Channel MOS FET

ADE-208-1245 (Z)

1st. Edition

Mar. 2001

Application

High speed power switching

Features

•

Low on-resistance

•

High speed switching

•

Low drive current

•

No secondary breakdown

•

Suitable for switching regulator and DC-DC converter

Outline

DPAK-1

1. Gate

2. Drain

3. Source

4. Drain

2 3

2SK1151(S)-(3) Related Products

	2SK1151(S)-(3)	2SK1151(S)-(1)	2SK1151(S)-(2)	2SK1152(L)-(1)	2SK1152(S)-(3)	2SK1152(S)-(2)
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
Configuration	Single	Single	Single	Single	Single	Single
Maximum drain current (Abs) (ID)	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	20 W	20 W	20 W	20 W	20 W	20 W
surface mount	YES	YES	YES	NO	YES	YES
Base Number Matches	1	1	1	1	1	1

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