2SK2084(L), 2SK2084(S)
Silicon N-Channel MOS FET
ADE-208-1342 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
Low on-resistance
•
High speed switching
•
Low drive current
•
4 V gate drive device can be driven from 5 V source
•
Suitable for Switching regulator, DC - DC converter
Outline
DPAK-2
4
4
1
1
D
G
1. Gate
2. Drain
3. Source
4. Drain
S
2
3
2 3
2SK2084(L), 2SK2084(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
20
±20
7
28
7
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
2SK2084(L), 2SK2084(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
Min
20
±20
—
—
1.0
—
—
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse Test
|yfs|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.04
0.058
9
800
680
165
15
60
100
80
0.9
80
Max
—
—
±10
100
2.5
0.053
0.075
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 7 A, V
GS
= 0
I
F
= 7 A, V
GS
= 0,
di
F
/ dt = 20 A /
µs
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 16 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A
V
GS
= 10 V*
1
I
D
= 4 A
V
GS
= 4 V*
1
I
D
= 4 A
V
DS
= 10 V*
1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 4 A
V
GS
= 10 V
R
L
= 5
Ω
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
V
GS(off)
R
DS(on)
3
2SK2084(L), 2SK2084(S)
Power vs. Temperature Derating
40
Pch (W)
I
D
(A)
50
30
10
3
1
PW
Maximum Safe Operation Area
10 µs
100 µs
=
30
1
10
m
s
Channel Dissipation
20
10
Drain Current
ms
DC
(1
(T O
sh
c = pe
ot)
Operation in
ra
25 ti
this area is
°C on
limited by R
DS(on)
)
0.3
Ta = 25 °C
0
50
100
150
Tc (°C)
200
0.1
0.3
1
3
Drain to Source Voltage
10
30
V
DS
(V)
Case Temperature
Typical Output Characteristics
20
10 V
6V
4V
Pulse Test
(A)
20
Typical Transfer Characteristics
I
D
(A)
16
16
V
DS
= 10 V
Pulse Test
3.5 V
12
I
D
Drain Current
3V
4
V
GS
= 2.5 V
12
Drain Current
8
8
Tc = 75 °C
25 °C
–25 °C
1
2
3
Gate to Source Voltage
4
5
V
GS
(V)
4
0
2
4
6
Drain to Source Voltage
8
V
DS
(V)
10
0
4
2SK2084(L), 2SK2084(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source On State Resistance
R
DS(on)
(
Ω
)
Drain to Source Saturation Voltage
V
DS(on)
(V)
0.5
Pulse Test
0.4
Static Drain to Source State Resistance
vs. Drain Current
Pulse Test
0.1
V
GS
= 4 V
10 V
0.2
0.3
I
D
= 5 A
0.05
0.2
2A
1A
0
2
4
6
Gate to Source Voltage
8
V
GS
(V)
10
0.1
0.02
0.01
0.1 0.2
0.5 1
2
5
10
Drain Current I
D
(A)
20
Static Drain to Source on State Resistance
R
DS(on)
(
Ω
)
Pulse Test
0.16
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Forward Transfer Admittance vs.
Drain Current
20
10
5
Tc = –25 °C
25 °C
75 °C
V
DS
= 10 V
Pulse Test
0.12
V
GS
= 4 V
5A
1A
2A
1A
2A
5A
0.08
2
1
0.5
0.1
0.04
10 V
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
0.2
0.5
1
2
5
10
Drain Current I
D
(A)
5
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