GS8182S09BD-200IT datasheet, PDF

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GS8182S09BD-200IT: DescriptionDDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165; Categorystorage storage; File Size759KB，36 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/

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GS8182S09BD-200IT Overview

DDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165

GS8182S09BD-200IT Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	GSI Technology
Parts packaging code	BGA
package instruction	LBGA,
Contacts	165
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.B
Maximum access time	0.45 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B165
JESD-609 code	e0
length	15 mm
memory density	18874368 bit
Memory IC Type	DDR SRAM
memory width	9
Number of functions	1
Number of terminals	165
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2MX9
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	13 mm

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GS8182S08/09/18/36BD-400/375/333/300/250/200/167

165-Bump BGA

Commercial Temp

Industrial Temp

Features

• Simultaneous Read and Write SigmaSIO™ Interface

• JEDEC-standard pinout and package

• Dual Double Data Rate interface

• Byte Write controls sampled at data-in time

• DLL circuitry for wide output data valid window and future

frequency scaling

• Burst of 2 Read and Write

• 1.8 V +100/–100 mV core power supply

• 1.5 V or 1.8 V HSTL Interface

• Pipelined read operation

• Fully coherent read and write pipelines

• ZQ mode pin for programmable output drive strength

• IEEE 1149.1 JTAG-compliant Boundary Scan

• Pin-compatible with present 9Mb, 36Mb, and 72Mb and

future 144Mb devices

• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package

• RoHS-compliant 165-bump BGA package available

18Mb Burst of 2

SigmaSIO DDR-II

SRAM

400 MHz–167 MHz

1.8 V V

1.8 V and 1.5 V I/O

Bottom View

165-Bump, 13 mm x 15 mm BGA

1 mm Bump Pitch, 11 x 15 Bump Array

JEDEC Std. MO-216, Variation CAB-1

SigmaSIO DDR-II™ Family Overview

GS8182S08/09/18/36BD are built in compliance with the

SigmaSIO DDR-II SRAM pinout standard for Separate I/O

synchronous SRAMs. They are 18,874,368-bit (18Mb)

SRAMs. These are the first in a family of wide, very low

voltage HSTL I/O SRAMs designed to operate at the speeds

needed to implement economical high performance

networking systems.

K clocks are routed internally to fire the output registers

instead. Each Burst of 2 SigmaSIO DDR-II SRAM also

supplies Echo Clock outputs, CQ and CQ, which are

synchronized with read data output. When used in a source

synchronous clocking scheme, the Echo Clock outputs can be

used to fire input registers at the data’s destination.

Each internal read and write operation in a SigmaSIO DDR-II

B2 RAM is two times wider than the device I/O bus. An input

data bus de-multiplexer is used to accumulate incoming data

before it is simultaneously written to the memory array. An

output data multiplexer is used to capture the data produced

from a single memory array read and then route it to the

appropriate output drivers as needed. Therefore, the address

field of a SigmaSIO DDR-II B2 is always one address pin less

than the advertised index depth (e.g., the 2M x 8 has a 1M

addressable index).

Clocking and Addressing Schemes

A Burst of 2 SigmaSIO DDR-II SRAM is a synchronous

device. It employs dual input register clock inputs, K and K.

The device also allows the user to manipulate the output

Parameter Synopsis

-400

tKHKH

tKHQV

2.5 ns

0.45 ns

-375

2.67 ns

0.45 ns

-333

3.0 ns

0.45 ns

-300

3.3 ns

0.45 ns

-250

4.0 ns

0.45 ns

-200

5.0 ns

0.45 ns

-167

6.0 ns

0.5 ns

Rev: 1.03c 11/2011

1/36

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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