OptiMOS3 Power-Transistor
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| Parts packaging code | TO-252AA |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 4 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Other features | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Efficiency Rating (Eas) | 20 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (Abs) (ID) | 30 A |
| Maximum drain current (ID) | 30 A |
| Maximum drain-source on-resistance | 0.0135 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252AA |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 31 W |
| Maximum pulsed drain current (IDM) | 210 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | MATTE TIN |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| IPD135N03LG | IPF135N03LG | IPD135N03LG_10 | IPS135N03LG | IPU135N03LG | |
|---|---|---|---|---|---|
| Description | OptiMOS3 Power-Transistor | OptiMOS3 Power-Transistor | OptiMOS3 Power-Transistor | OptiMOS3 Power-Transistor | OptiMOS3 Power-Transistor |
| Is it Rohs certified? | conform to | conform to | - | conform to | conform to |
| Maker | Infineon | Infineon | - | Infineon | Infineon |
| Parts packaging code | TO-252AA | TO-252 | - | TO-251 | TO-251AA |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G3 | - | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 |
| Contacts | 4 | 4 | - | 3 | 3 |
| Reach Compliance Code | compli | compli | - | compliant | compli |
| ECCN code | EAR99 | EAR99 | - | EAR99 | EAR99 |
| Other features | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | - | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Efficiency Rating (Eas) | 20 mJ | 20 mJ | - | 20 mJ | 20 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V | 30 V | - | 30 V | 30 V |
| Maximum drain current (Abs) (ID) | 30 A | 30 A | - | 30 A | 30 A |
| Maximum drain current (ID) | 30 A | 30 A | - | 30 A | 30 A |
| Maximum drain-source on-resistance | 0.0135 Ω | 0.0135 Ω | - | 0.0135 Ω | 0.0135 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252AA | TO-252 | - | TO-251 | TO-251AA |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G3 | - | R-PSIP-T3 | R-PSIP-T3 |
| JESD-609 code | e3 | e3 | - | e3 | e3 |
| Humidity sensitivity level | 1 | - | - | 1 | 1 |
| Number of components | 1 | 1 | - | 1 | 1 |
| Number of terminals | 2 | 3 | - | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C | 175 °C | - | 175 °C | 175 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | - | IN-LINE | IN-LINE |
| Peak Reflow Temperature (Celsius) | 260 | NOT SPECIFIED | - | 260 | 260 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 31 W | 31 W | - | 31 W | 31 W |
| Maximum pulsed drain current (IDM) | 210 A | 210 A | - | 210 A | 210 A |
| Certification status | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| surface mount | YES | YES | - | NO | NO |
| Terminal surface | MATTE TIN | MATTE TIN | - | MATTE TIN | MATTE TIN |
| Terminal form | GULL WING | GULL WING | - | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | - | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | 40 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | - | SILICON | SILICON |
| Base Number Matches | 1 | 1 | - | 1 | 1 |
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