IPU135N03LG datasheet, PDF - EEWORLD Datasheet

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IPU135N03LG: DescriptionOptiMOS3 Power-Transistor; CategoryDiscrete semiconductor The transistor; File Size1MB，13 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPU135N03LG Overview

OptiMOS3 Power-Transistor

IPU135N03LG Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	TO-251AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	20 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	30 A
Maximum drain current (ID)	30 A
Maximum drain-source on-resistance	0.0135 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	31 W
Maximum pulsed drain current (IDM)	210 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

IPU135N03LG Related Products

	IPU135N03LG	IPD135N03LG	IPF135N03LG	IPD135N03LG_10	IPS135N03LG
Description	OptiMOS3 Power-Transistor	OptiMOS3 Power-Transistor	OptiMOS3 Power-Transistor	OptiMOS3 Power-Transistor	OptiMOS3 Power-Transistor
Is it Rohs certified?	conform to	conform to	conform to	-	conform to
Maker	Infineon	Infineon	Infineon	-	Infineon
Parts packaging code	TO-251AA	TO-252AA	TO-252	-	TO-251
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G3	-	IN-LINE, R-PSIP-T3
Contacts	3	4	4	-	3
Reach Compliance Code	compli	compli	compli	-	compliant
ECCN code	EAR99	EAR99	EAR99	-	EAR99
Other features	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	-	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	20 mJ	20 mJ	20 mJ	-	20 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	-	30 V
Maximum drain current (Abs) (ID)	30 A	30 A	30 A	-	30 A
Maximum drain current (ID)	30 A	30 A	30 A	-	30 A
Maximum drain-source on-resistance	0.0135 Ω	0.0135 Ω	0.0135 Ω	-	0.0135 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA	TO-252AA	TO-252	-	TO-251
JESD-30 code	R-PSIP-T3	R-PSSO-G2	R-PSSO-G3	-	R-PSIP-T3
JESD-609 code	e3	e3	e3	-	e3
Humidity sensitivity level	1	1	-	-	1
Number of components	1	1	1	-	1
Number of terminals	3	2	3	-	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	-	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	-	IN-LINE
Peak Reflow Temperature (Celsius)	260	260	NOT SPECIFIED	-	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	N-CHANNEL
Maximum power dissipation(Abs)	31 W	31 W	31 W	-	31 W
Maximum pulsed drain current (IDM)	210 A	210 A	210 A	-	210 A
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
surface mount	NO	YES	YES	-	NO
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN	-	MATTE TIN
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	-	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	-	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	40	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	-	SILICON
Base Number Matches	1	1	1	-	1

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