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BAR90-02LS

Description
80 V, SILICON, PIN DIODE
CategoryDiscrete semiconductor    diode   
File Size908KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BAR90-02LS Overview

80 V, SILICON, PIN DIODE

BAR90-02LS Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeDFN
package instructionR-XBCC-N2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationSWITCHING
Minimum breakdown voltage80 V
ConfigurationSINGLE
Maximum diode capacitance0.35 pF
Diode component materialsSILICON
Maximum diode forward resistance2.3 Ω
Diode typePIN DIODE
Maximum forward voltage (VF)0.87 V
frequency bandL BAND
JESD-30 codeR-XBCC-N2
Minority carrier nominal lifetime0.75 µs
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

BAR90-02LS Related Products

BAR90-02LS BAR90-02LRH BAR90-098LRH
Description 80 V, SILICON, PIN DIODE 80 V, SILICON, PIN DIODE 80 V, SILICON, PIN DIODE
Is it Rohs certified? conform to conform to conform to
Maker Infineon Infineon Infineon
Parts packaging code DFN DFN DFN
package instruction R-XBCC-N2 R-XBCC-N2 R-XBCC-N4
Contacts 2 2 3
Reach Compliance Code unknow unknow compli
ECCN code EAR99 EAR99 EAR99
application SWITCHING SWITCHING SWITCHING
Minimum breakdown voltage 80 V 80 V 80 V
Configuration SINGLE SINGLE SEPARATE, 2 ELEMENTS
Maximum diode capacitance 0.35 pF 0.35 pF 0.35 pF
Diode component materials SILICON SILICON SILICON
Maximum diode forward resistance 2.3 Ω 2.3 Ω 2.3 Ω
Diode type PIN DIODE PIN DIODE PIN DIODE
Maximum forward voltage (VF) 0.87 V 0.87 V 0.87 V
frequency band L BAND L BAND L BAND
JESD-30 code R-XBCC-N2 R-XBCC-N2 R-XBCC-N4
Minority carrier nominal lifetime 0.75 µs 0.75 µs 0.75 µs
Number of components 1 1 2
Number of terminals 2 2 4
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.15 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 80 V 80 V 80 V
surface mount YES YES YES
technology POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1
Is it lead-free? - Lead free Lead free

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