80 V, SILICON, PIN DIODE
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| Parts packaging code | DFN |
| package instruction | R-XBCC-N4 |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Is Samacsys | N |
| application | SWITCHING |
| Minimum breakdown voltage | 80 V |
| Configuration | SEPARATE, 2 ELEMENTS |
| Maximum diode capacitance | 0.35 pF |
| Diode component materials | SILICON |
| Maximum diode forward resistance | 2.3 Ω |
| Diode type | PIN DIODE |
| Maximum forward voltage (VF) | 0.87 V |
| frequency band | L BAND |
| JESD-30 code | R-XBCC-N4 |
| Minority carrier nominal lifetime | 0.75 µs |
| Number of components | 2 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Maximum power dissipation | 0.25 W |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 80 V |
| Maximum reverse current | 0.05 µA |
| Reverse test voltage | 60 V |
| surface mount | YES |
| technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal form | NO LEAD |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Base Number Matches | 1 |
| BAR90-098LRH | BAR90-02LS | BAR90-02LRH | |
|---|---|---|---|
| Description | 80 V, SILICON, PIN DIODE | 80 V, SILICON, PIN DIODE | 80 V, SILICON, PIN DIODE |
| Is it Rohs certified? | conform to | conform to | conform to |
| Maker | Infineon | Infineon | Infineon |
| Parts packaging code | DFN | DFN | DFN |
| package instruction | R-XBCC-N4 | R-XBCC-N2 | R-XBCC-N2 |
| Contacts | 3 | 2 | 2 |
| Reach Compliance Code | compli | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 |
| application | SWITCHING | SWITCHING | SWITCHING |
| Minimum breakdown voltage | 80 V | 80 V | 80 V |
| Configuration | SEPARATE, 2 ELEMENTS | SINGLE | SINGLE |
| Maximum diode capacitance | 0.35 pF | 0.35 pF | 0.35 pF |
| Diode component materials | SILICON | SILICON | SILICON |
| Maximum diode forward resistance | 2.3 Ω | 2.3 Ω | 2.3 Ω |
| Diode type | PIN DIODE | PIN DIODE | PIN DIODE |
| Maximum forward voltage (VF) | 0.87 V | 0.87 V | 0.87 V |
| frequency band | L BAND | L BAND | L BAND |
| JESD-30 code | R-XBCC-N4 | R-XBCC-N2 | R-XBCC-N2 |
| Minority carrier nominal lifetime | 0.75 µs | 0.75 µs | 0.75 µs |
| Number of components | 2 | 1 | 1 |
| Number of terminals | 4 | 2 | 2 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Maximum power dissipation | 0.25 W | 0.15 W | 0.25 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 80 V | 80 V | 80 V |
| surface mount | YES | YES | YES |
| technology | POSITIVE-INTRINSIC-NEGATIVE | POSITIVE-INTRINSIC-NEGATIVE | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal form | NO LEAD | NO LEAD | NO LEAD |
| Terminal location | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Base Number Matches | 1 | 1 | 1 |
| Is it lead-free? | Lead free | - | Lead free |
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