Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Parameter Name | Attribute value |
Maker | SAMSUNG |
Parts packaging code | SFM |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | unknown |
Other features | HIGH RELIABILITY |
Maximum collector current (IC) | 5 A |
Collector-emitter maximum voltage | 500 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 8 |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | NPN |
Maximum power consumption environment | 50 W |
Maximum power dissipation(Abs) | 50 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 18 MHz |
Maximum off time (toff) | 3300 ns |
Maximum opening time (tons) | 500 ns |
VCEsat-Max | 1 V |
KSC5061 | KSC5061-R | KSC5061-O | KSC5061-Y | |
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Description | Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN |
Maker | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG |
Parts packaging code | SFM | SFM | SFM | SFM |
package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown | unknown |
Other features | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
Maximum collector current (IC) | 5 A | 5 A | 5 A | 5 A |
Collector-emitter maximum voltage | 500 V | 500 V | 500 V | 500 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 8 | 15 | 20 | 30 |
JEDEC-95 code | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Polarity/channel type | NPN | NPN | NPN | NPN |
Maximum power consumption environment | 50 W | 50 W | 50 W | 50 W |
Maximum power dissipation(Abs) | 50 W | 50 W | 50 W | 50 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 18 MHz | 18 MHz | 18 MHz | 18 MHz |
Maximum off time (toff) | 3300 ns | 3300 ns | 3300 ns | 3300 ns |
Maximum opening time (tons) | 500 ns | 500 ns | 500 ns | 500 ns |
VCEsat-Max | 1 V | 1 V | 1 V | 1 V |
Is it Rohs certified? | - | incompatible | incompatible | incompatible |
JESD-609 code | - | e0 | e0 | e0 |
Terminal surface | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |