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KSC5061

Description
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size160KB,3 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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KSC5061 Overview

Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSC5061 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Maximum collector current (IC)5 A
Collector-emitter maximum voltage500 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment50 W
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)18 MHz
Maximum off time (toff)3300 ns
Maximum opening time (tons)500 ns
VCEsat-Max1 V

KSC5061 Related Products

KSC5061 KSC5061-R KSC5061-O KSC5061-Y
Description Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Parts packaging code SFM SFM SFM SFM
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Maximum collector current (IC) 5 A 5 A 5 A 5 A
Collector-emitter maximum voltage 500 V 500 V 500 V 500 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 8 15 20 30
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN
Maximum power consumption environment 50 W 50 W 50 W 50 W
Maximum power dissipation(Abs) 50 W 50 W 50 W 50 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 18 MHz 18 MHz 18 MHz 18 MHz
Maximum off time (toff) 3300 ns 3300 ns 3300 ns 3300 ns
Maximum opening time (tons) 500 ns 500 ns 500 ns 500 ns
VCEsat-Max 1 V 1 V 1 V 1 V
Is it Rohs certified? - incompatible incompatible incompatible
JESD-609 code - e0 e0 e0
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

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