NAND01GR4B3AN1E datasheet, PDF

NAND01GR4B3AN1E: DescriptionFlash, 64MX16, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48; Categorystorage storage; File Size1MB，59 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com; Environmental Compliance

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NAND01GR4B3AN1E Overview

Flash, 64MX16, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Numonyx ( Micron )
Parts packaging code	TSOP
package instruction	TSOP1,
Contacts	48
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	35 ns
JESD-30 code	R-PDSO-G48
length	18.4 mm
memory density	1073741824 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	48
word count	67108864 words
character code	64000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	12 mm

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