5302DG-T92-B datasheet, PDF - EEWORLD Datasheet

5302DG-T92-B: DescriptionHIGH VOLTAGE NPN TRANSISTOR WITH DIODE; CategoryDiscrete semiconductor The transistor; File Size30KB，2 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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5302DG-T92-B Overview

HIGH VOLTAGE NPN TRANSISTOR WITH DIODE

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compli
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	400 V
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	5
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.6 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Maximum off time (toff)	1300 ns
Maximum opening time (tons)	300 ns
VCEsat-Max	1.5 V

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