KSD1616G datasheet, PDF - EEWORLD Datasheet

KSD1616G: DescriptionSmall Signal Bipolar Transistor, 1A I(C), NPN; CategoryDiscrete semiconductor The transistor; File Size182KB，3 Pages; ManufacturerFCI / Amphenol

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KSD1616G Overview

Small Signal Bipolar Transistor, 1A I(C), NPN

Parameter Name	Attribute value
Maker	FCI / Amphenol
Reach Compliance Code	unknown
Maximum collector current (IC)	1 A
Configuration	Single
Minimum DC current gain (hFE)	200
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.75 W
surface mount	NO
Nominal transition frequency (fT)	100 MHz

	KSD1616G	KSD1616L	KSD1616AY	KSD1616AG	KSD1616AL	KSD1616Y
Description	Small Signal Bipolar Transistor, 1A I(C), NPN	Small Signal Bipolar Transistor, 1A I(C), NPN	Small Signal Bipolar Transistor, 1A I(C), NPN	Small Signal Bipolar Transistor, 1A I(C), NPN	Small Signal Bipolar Transistor, 1A I(C), NPN	Small Signal Bipolar Transistor, 1A I(C), NPN
Maker	FCI / Amphenol	FCI / Amphenol	FCI / Amphenol	FCI / Amphenol	FCI / Amphenol	FCI / Amphenol
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	1 A	1 A	1 A	1 A	-	1 A
Configuration	Single	Single	Single	Single	-	Single
Minimum DC current gain (hFE)	200	300	135	200	-	135
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	-	150 °C
Polarity/channel type	NPN	NPN	NPN	NPN	-	NPN
Maximum power dissipation(Abs)	0.75 W	0.75 W	0.75 W	0.75 W	-	0.75 W
surface mount	NO	NO	NO	NO	-	NO
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	-	100 MHz

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