6 Amps, 100 Volts N-CHANNEL POWER MOSFET
6N10 | 6N10G-TN3-R | 6N10L-TN3-R | |
---|---|---|---|
Description | 6 Amps, 100 Volts N-CHANNEL POWER MOSFET | 6 Amps, 100 Volts N-CHANNEL POWER MOSFET | 6 Amps, 100 Volts N-CHANNEL POWER MOSFET |
Is it Rohs certified? | - | conform to | conform to |
Maker | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD |
Parts packaging code | - | TO-252 | TO-252 |
package instruction | - | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
Contacts | - | 4 | 4 |
Reach Compliance Code | - | compli | compli |
ECCN code | - | EAR99 | EAR99 |
Configuration | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | - | 100 V | 100 V |
Maximum drain current (Abs) (ID) | - | 6.5 A | 6.5 A |
Maximum drain current (ID) | - | 6.5 A | 6.5 A |
Maximum drain-source on-resistance | - | 0.2 Ω | 0.2 Ω |
FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | - | TO-252 | TO-252 |
JESD-30 code | - | R-PSSO-G2 | R-PSSO-G2 |
Number of components | - | 1 | 1 |
Number of terminals | - | 2 | 2 |
Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | - | 150 °C | 150 °C |
Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | - | RECTANGULAR | RECTANGULAR |
Package form | - | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | - | N-CHANNEL | N-CHANNEL |
Maximum power dissipation(Abs) | - | 16 W | 16 W |
Maximum pulsed drain current (IDM) | - | 8 A | 8 A |
surface mount | - | YES | YES |
Terminal form | - | GULL WING | GULL WING |
Terminal location | - | SINGLE | SINGLE |
Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED |
transistor applications | - | SWITCHING | SWITCHING |
Transistor component materials | - | SILICON | SILICON |