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6N10

Description
6 Amps, 100 Volts N-CHANNEL POWER MOSFET
File Size148KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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6N10 Overview

6 Amps, 100 Volts N-CHANNEL POWER MOSFET

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6N10 6N10G-TN3-R 6N10L-TN3-R
Description 6 Amps, 100 Volts N-CHANNEL POWER MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified? - conform to conform to
Maker - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code - TO-252 TO-252
package instruction - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts - 4 4
Reach Compliance Code - compli compli
ECCN code - EAR99 EAR99
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 100 V 100 V
Maximum drain current (Abs) (ID) - 6.5 A 6.5 A
Maximum drain current (ID) - 6.5 A 6.5 A
Maximum drain-source on-resistance - 0.2 Ω 0.2 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-252 TO-252
JESD-30 code - R-PSSO-G2 R-PSSO-G2
Number of components - 1 1
Number of terminals - 2 2
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 16 W 16 W
Maximum pulsed drain current (IDM) - 8 A 8 A
surface mount - YES YES
Terminal form - GULL WING GULL WING
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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