6N10L-TN3-R datasheet, PDF - EEWORLD Datasheet

6N10L-TN3-R: Description6 Amps, 100 Volts N-CHANNEL POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size148KB，5 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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6N10L-TN3-R Overview

6 Amps, 100 Volts N-CHANNEL POWER MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	6.5 A
Maximum drain current (ID)	6.5 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	16 W
Maximum pulsed drain current (IDM)	8 A
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	6N10L-TN3-R	6N10G-TN3-R	6N10
Description	6 Amps, 100 Volts N-CHANNEL POWER MOSFET	6 Amps, 100 Volts N-CHANNEL POWER MOSFET	6 Amps, 100 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified?	conform to	conform to	-
Maker	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	-
Parts packaging code	TO-252	TO-252	-
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	-
Contacts	4	4	-
Reach Compliance Code	compli	compli	-
ECCN code	EAR99	EAR99	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	100 V	100 V	-
Maximum drain current (Abs) (ID)	6.5 A	6.5 A	-
Maximum drain current (ID)	6.5 A	6.5 A	-
Maximum drain-source on-resistance	0.2 Ω	0.2 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-252	TO-252	-
JESD-30 code	R-PSSO-G2	R-PSSO-G2	-
Number of components	1	1	-
Number of terminals	2	2	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Maximum power dissipation(Abs)	16 W	16 W	-
Maximum pulsed drain current (IDM)	8 A	8 A	-
surface mount	YES	YES	-
Terminal form	GULL WING	GULL WING	-
Terminal location	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-

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