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2N7002ZG-AE2-R

Description
300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size170KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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2N7002ZG-AE2-R Overview

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

2N7002ZG-AE2-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.3 A
Maximum drain-source on-resistance7.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
2N7002Z
300m Amps, 60 Volts
N-CHANNEL ENHANCEMENT
MODE MOSFET
DESCRIPTION
The UTC
2N7002Z
uses advanced technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
<7.5Ω
* Low Reverse Transfer Capacitance (C
RSS
= typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N7002ZL-AE2-R
2N7002ZG-AE2-R
Package
SOT-23-3
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-273.F

2N7002ZG-AE2-R Related Products

2N7002ZG-AE2-R 2N7002ZL-AE2-R 2N7002Z
Description 300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET 300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET 300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET
Is it Rohs certified? conform to conform to -
package instruction SMALL OUTLINE, R-PDSO-G3 LEAD FREE PACKAGE-3 -
Reach Compliance Code compli compli -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 60 V 60 V -
Maximum drain current (ID) 0.3 A 0.3 A -
Maximum drain-source on-resistance 7.5 Ω 7.5 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
Maximum feedback capacitance (Crss) 5 pF 5 pF -
JEDEC-95 code TO-236 TO-236 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 -
Number of components 1 1 -
Number of terminals 3 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type N-CHANNEL N-CHANNEL -
surface mount YES YES -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -

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