UNISONIC TECHNOLOGIES CO., LTD
2N7002Z
300m Amps, 60 Volts
N-CHANNEL ENHANCEMENT
MODE MOSFET
DESCRIPTION
The UTC
2N7002Z
uses advanced technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
<7.5Ω
* Low Reverse Transfer Capacitance (C
RSS
= typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N7002ZL-AE2-R
2N7002ZG-AE2-R
Package
SOT-23-3
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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2N7002Z
ABSOLUTE MAXIMUM RATINGS
(T
a
= 25°C)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V
DSS
V
GSS
Power MOSFET
RATINGS
UNIT
V
60
V
±20
Continuous
300
Drain Current
I
D
mA
Pulse(Note 2)
800
Power Dissipation
225
mW
P
D
Derating above T
A
=25°C
1.6
mW/°C
Junction Temperature
T
J
°C
+150
Storage Temperature
T
STG
°C
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≦10μs, Duty cycle≦1%
ELECTRICAL CHARACTERISTICS
(T
a
=25°C)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=10µA
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=10V, I
D
=1mA
V
GS
=10V, I
D
=0.5A
V
GS
=5V, I
D
=0.05A
MIN
60
1.0
±10
1.0
1.85
2.5
7.5
7.5
50
25
5.0
20
30
1.5
0.8
115
TYP
MAX UNIT
V
µA
µA
V
Ω
pF
pF
pF
ns
ns
V
A
mA
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
I
D
=0.2 A, V
DD
=30V, V
GS
=10V,
R
L
=150Ω, R
G
=10Ω
Turn-OFF Delay Time
t
D(OFF)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, Is=115mA (Note )
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Maximum Continuous Drain-Source Diode
Is
Forward Current
Note: Pulse width≦300μs, Duty cycle≦1%
25
10
3.0
12
20
0.88
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www.unisonic.com.tw
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QW-R502-273.F
2N7002Z
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
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QW-R502-273.F
2N7002Z
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Power MOSFET
300
250
1.2
1.0
Drain Current, I
D
(mA)
0.8
0.6
0.4
0.2
0
Drain Current vs. Gate Threshold Voltage
Drain Current, I
D
(µA)
200
150
100
50
0
0
20
40
60
80
Drain-Source Breakdown Voltage, BV
DSS
(V)
0
2.0
0.5
1.0
1.5
Gate Threshold Voltage, V
TH
(V)
0.5
0.4
0.3
0.2
0.1
Drain-Source On-State Resistance
Characteristics
Drain Current vs. Source to Drain Voltage
140
120
Drain Current, I
D
(mA)
100
80
60
40
20
0
Drain Current, I
D
(A)
V
GS
=10V
I
D
=500mA
0
V
GS
=5V
I
D
=50mA
0
1.0
0.5
2.5
1.5
2.0
Drain to Source Voltage, V
DS
(V)
0
0.2
0.4
0.6
0.8
Source to Drain Voltage, V
SD
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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