2N7002ZL-AE2-R datasheet, PDF - EEWORLD Datasheet

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2N7002ZL-AE2-R: Description300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET; CategoryDiscrete semiconductor The transistor; File Size170KB，5 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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2N7002ZL-AE2-R Overview

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

2N7002ZL-AE2-R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	LEAD FREE PACKAGE-3
Reach Compliance Code	compli
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.3 A
Maximum drain-source on-resistance	7.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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UNISONIC TECHNOLOGIES CO., LTD

2N7002Z

300m Amps, 60 Volts

N-CHANNEL ENHANCEMENT

MODE MOSFET

DESCRIPTION

The UTC

2N7002Z

uses advanced technology to provide

excellent R

DS(ON)

, low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in

PWM applications.

Power MOSFET

FEATURES

* R

DS(ON)

<7.5Ω

* Low Reverse Transfer Capacitance (C

RSS

= typical 3.0 pF)

* ESD Protected

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness

SYMBOL

3.Drain

2.Gate

1.Source

ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

2N7002ZL-AE2-R

2N7002ZG-AE2-R

Package

SOT-23-3

Pin Assignment

Packing

Tape Reel

MARKING

www.unisonic.com.tw

1 of 4

QW-R502-273.F

2N7002ZL-AE2-R Related Products

	2N7002ZL-AE2-R	2N7002Z	2N7002ZG-AE2-R
Description	300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET	300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET	300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET
Is it Rohs certified?	conform to	-	conform to
package instruction	LEAD FREE PACKAGE-3	-	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli	-	compli
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	-	60 V
Maximum drain current (ID)	0.3 A	-	0.3 A
Maximum drain-source on-resistance	7.5 Ω	-	7.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF	-	5 pF
JEDEC-95 code	TO-236	-	TO-236
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3
Number of components	1	-	1
Number of terminals	3	-	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	-	N-CHANNEL
surface mount	YES	-	YES
Terminal form	GULL WING	-	GULL WING
Terminal location	DUAL	-	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON

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