MS1480 datasheet, PDF - EEWORLD Datasheet

MS1480: DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M111, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size94KB，3 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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MS1480 Overview

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M111, 6 PIN

Parameter Name	Attribute value
Maker	Microsemi
package instruction	FLANGE MOUNT, O-CXFM-F6
Contacts	6
Reach Compliance Code	compliant
Shell connection	EMITTER
Maximum collector current (IC)	10 A
Configuration	SINGLE
Minimum DC current gain (hFE)	20
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-CXFM-F6
JESD-609 code	e0
Number of components	1
Number of terminals	6
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	175 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	UNSPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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