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K7D163674B

Description
512Kx36 & 1Mx18 SRAM
File Size454KB,17 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K7D163674B Overview

512Kx36 & 1Mx18 SRAM

K7D163674B
K7D161874B
Document Title
16M DDR SYNCHRONOUS SRAM
512Kx36 & 1Mx18 SRAM
Revision History
Rev No.
Rev. 0.0
Rev. 0.1
History
Initial document.
Change JTAG DC OPERATING CONDITONS/AC TEST CONDITIONS
-to support 1.8~2.5V V
DD
, change some items.
Change DC CHARACTERISTICS (Stop Clock Standby Current)
-I
SB1
: 100 -> 150
Change JTAG Instruction Cording
- For Reserved
Change DC CHARACTERISTICS (Increase Operating Current)
- x36 : add 40mA, x18 : add 60mA
Add DC CHARACTERISTICS
- V
IN-CLK,
V
DIF-CLK,
V
CM-CLK
Add AC INPUT CHARACTERISTICS
Add INPUT DEFINITION
Draft Data
Oct. 2003
Nov. 2003
Remark
Advance
Preliminary
Rev. 0.2
Feb. 2004
Preliminary
Rev. 0.3
Feb. 2004
Preliminary
Rev. 1.0
Mar. 2004
Final
Rev. 1.1
Jan. 2004
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
-1-
Rev 1.1
Jan. 2005

K7D163674B Related Products

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Description 512Kx36 & 1Mx18 SRAM 512Kx36 & 1Mx18 SRAM 512Kx36 & 1Mx18 SRAM 512Kx36 & 1Mx18 SRAM 512Kx36 & 1Mx18 SRAM 512Kx36 & 1Mx18 SRAM 512Kx36 & 1Mx18 SRAM 512Kx36 & 1Mx18 SRAM 512Kx36 & 1Mx18 SRAM 512Kx36 & 1Mx18 SRAM
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