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K4E160812D-BL600

Description
EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
Categorystorage    storage   
File Size257KB,21 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4E160812D-BL600 Overview

EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28

K4E160812D-BL600 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeSOJ
package instructionSOJ,
Contacts28
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
JESD-30 codeR-PDSO-J28
length18.42 mm
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum seat height3.76 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
width7.62 mm
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