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SB180

Description
Rectifier Diode, Schottky, 1 Element, 1A, 80V V(RRM), Silicon, DO-41, DO-41, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size34KB,2 Pages
ManufacturerLITEON
Websitehttp://optoelectronics.liteon.com/en-global/Home/index
Environmental Compliance
Lite-On began producing LED lamps in 1975; the company has steadily grown to become one of the world's largest manufacturers of optoelectronics products by providing customers with visible and infrared product solutions. High-volume production of commercial and application-specific products, as well as strong R&D and vertical integration capabilities have proven to be key and differentiating factors in Lite-On's success.
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SB180 Overview

Rectifier Diode, Schottky, 1 Element, 1A, 80V V(RRM), Silicon, DO-41, DO-41, 2 PIN

SB180 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLITEON
package instructionDO-41, 2 PIN
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.79 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
JESD-609 codee3/e4
Maximum non-repetitive peak forward current40 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
surface mountNO
technologySCHOTTKY
Terminal surfaceMATTE TIN/SILVER
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperature40

SB180 Preview

LITE
ON
POWER
SEMICONDUCTOR
SB170 thru SB1100
REVERSE VOLTAGE -
70
to
100
Volts
FORWARD CURRENT -
1.0
Ampere
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
A
DO-41
B
A
C
D
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
DO-41
Dim.
A
B
C
Min.
25.4
4.10
0.71
Max.
-
5.20
0.86
2.00
2.70
D
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Lengths
@T
L
=
100 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum Forward
Voltage at
I
F
=1.0A,T
J
=25 C
I
F
=1.0A,T
J
=100 C
SYMBOL
SB170
70
49
70
SB180
80
56
80
1.0
40
0.79
0.69
0.5
5.0
30
50
SB190
90
63
90
SB1100
100
70
100
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
A
V
F
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 1)
@T
J
=25 C
@T
J
=100 C
I
R
C
J
R
0JL
mA
pF
C/W
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
T
J
T
STG
-55 to +125
-55 to +150
C
C
REV. 1, 24-May-2000
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
RATING AND CHARACTERISTIC CURVES
SB170 thru SB1100
LITE
ON
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
1.0
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
40
0.8
30
0.6
0.4
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.375"(9.5mm) LEAD LENGTHS
20
0.2
10
Pulse width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
0
0
1
2
5
10
20
50
100
25
50
75
100
125
150
175
LEAD TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL JUNCTION CAPACITANCE
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT ,(A)
CAPACITANCE , (pF)
1.0
10
0.1
T
J
= 25 C, f= 1MHz
T
J
= 25 C
PULSE WIDTH 300us
0
0.1
1
4
10
100
0.01
0
0.2
0.4
0.6
0.8
1.0
12
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
REVERSE VOLTAGE , VOLTS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
INSTANTANEOUS REVERSE CURRENT ,(mA)
T
J
= 125 C
1.0
T
J
= 100 C
0.1
0.01
T
J
= 25 C
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE , (%)
REV. 1, 24-May-2000
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