2N5664_1 datasheet, PDF - EEWORLD Datasheet

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2N5664_1: Description5 A, 200 V, NPN, Si, POWER TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size119KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N5664_1 Overview

5 A, 200 V, NPN, Si, POWER TRANSISTOR

2N5664_1 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	5 A
Maximum Collector-Emitter Voltage	200 V
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	NO LEAD
terminal coating	TIN LEAD
Terminal location	DUAL
Packaging Materials	UNSPECIFIED
structure	SINGLE
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum ambient power consumption	1.5 W
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	5

2N5664_1 Preview

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/455

DEVICES

LEVELS

2N5664

2N5665

2N5666

2N5666S

2N5666U3

2N5667

2N5667S

JAN

JANTX

JANTV

JANS

ABSOLUTE MAXIMUM RATINGS

= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

Collector Current

Symbol

CEO

CBO

EBO

2N5664

2N5665

Total

Power Dissipation

@ T

= +25°C

@ T

= +100°C

, T

stg

2.5

2N5664

2N5666, S

200

250

6.0

1.0

5.0

2N5666, S

2N5667, S

1.2

-65 to +200

2N5666U3

1.5

°C

2N5665

2N5667, S

300

400

Unit

Vdc

Adc

TO-66 (TO-213AA)

2N5664, 2N5665

Operating & Storage Junction

Temperature Range

TO-5

2N5666, 2N5667

Note:

1) Consult 19500/455 for thermal derating curves.

ELECTRICAL CHARACTERISTICS

= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

= 10mAdc

2N5664, 2N5666

2N5665, 2N5667

Emitter-Base Breakdown Voltage

= 10μAdc

Collector-Emitter Cutoff Current

= 200Vdc

2N5664, 2N5666

= 300Vdc

2N5665, 2N5667

Collector-Base Cutoff Current

= 200Vdc

= 250Vdc

= 300Vdc

= 400Vdc

2N5664, 2N5666

2N5665, 2N5667

CBO

(BR)CER

250

400

6.0

0.2

0.1

1.0

0.1

1.0

Vdc

Symbol

Min.

Max.

Unit

TO-39 (TO-205AD)

2N5666S, 2N5667S

(BR)EBO

Vdc

CES

μAdc

mAdc

μAdc

mAdc

U-3

2N5666U3

T4-LDS-0062 Rev. 1 (081095)

Page 1 of 3

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/455

ELECTRICAL CHARACTERISTICS (con’t)

Parameters / Test Conditions

ON CHARACTERTICS

Forward-Current Transfer Ratio

= 0.5Adc, V

= 2.0Vdc

2N5664, 2N5666

2N5665, 2N5667

2N5664, 2N5666

2N5665, 2N5667

2N5664, 2N5666

2N5665, 2N5667

All Types

5.0

120

Symbol

Min.

Max.

Unit

= 1.0Adc, V

= 5.0Vdc

= 3.0Adc, V

= 5.0Vdc

= 5.0Adc, V

= 5.0Vdc

Collector-Emitter Saturation Voltage

= 3.0Adc, I

= 0.3Adc

= 3.0Adc, I

= 0.6Adc

= 5.0Adc, I

= 1.0Adc

Base-Emitter Saturation Voltage

= 3.0Adc, I

= 0.3Adc

= 3.0Adc, I

= 0.6Adc

= 5.0Adc, I

= 1.0Adc

2N5664, 2N5666

2N5665, 2N5667

All Types

CE(sat)

0.4

1.0

Vdc

2N5664, 2N5666

2N5665, 2N5667

All Types

BE(sat)

1.2

1.5

Vdc

DYNAMIC CHARACTERISTICS

Forward Current Transfer Ratio

= 0.5Adc, V

= 5.0Vdc, f = 10MHz

Output Capacitance

= 10Vdc, I

= 0, 100kHz

≤

1.0MHz

obo

120

2.0

7.0

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Turn-On Time

= 100Vdc; I

= 1.0Adc; I

= 30mAdc

Turn-Off Time

= 100Vdc; I

= 1.0Adc; I

= -I

= 50mAdc

2N5664, 2N5666

2N5665, 2N5667

off

1.5

2.0

μs

Symbol

Min.

Max.

0.25

Unit

μs

T4-LDS-0062 Rev. 1 (081095)

Page 2 of 3

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/455

SAFE OPERATING AREA

DC Tests

= 100°C, 1 Cycle, t

≥

1.0s, t

+ t

= 10μs

Test 1

= 6.0Vdc, I

= 5.0Adc

= 3.0Vdc, I

= 5.0Adc

Test 2

= 32Vdc, I

= 0.75Adc

= 40Vdc, I

= 0.75Adc

= 29Vdc, I

= 0.4Adc

= 37.5Vdc, I

= 0.4Adc

Test 3

= 200Vdc, I

= 29mAdc

= 200Vdc, I

= 19mAdc

= 300Vdc, I

= 21mAdc

= 300Vdc, I

= 14mAdc

2N5664

2N5666

2N5665

2N5667

2N5664

2N5665

2N5666

2N5667

2N5664 , 2N5665

2N5666, 2N5667

(2) Pulse Test: Pulse Width = 300µs, Duty Cycle

≤

2.0%

T4-LDS-0062 Rev. 1 (081095)

Page 3 of 3

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2N5664_1 Related Products

	2N5664_1	2N5666U3	2N5666S
Description	5 A, 200 V, NPN, Si, POWER TRANSISTOR	5 A, 200 V, NPN, Si, POWER TRANSISTOR	5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-39
Number of terminals	3	3	3
surface mount	Yes	YES	NO
Terminal form	NO LEAD	NO LEAD	WIRE
Terminal location	DUAL	DUAL	BOTTOM
Number of components	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Is it lead-free?	-	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible
Reach Compliance Code	-	compli	compli
ECCN code	-	EAR99	EAR99
Maximum collector current (IC)	-	5 A	5 A
Collector-emitter maximum voltage	-	200 V	200 V
Configuration	-	SINGLE	SINGLE
Minimum DC current gain (hFE)	-	5	5
JESD-30 code	-	R-XDSO-N3	O-MBCY-W3
JESD-609 code	-	e0	e0
Maximum operating temperature	-	200 °C	200 °C
Package body material	-	UNSPECIFIED	METAL
Package shape	-	RECTANGULAR	ROUND
Package form	-	SMALL OUTLINE	CYLINDRICAL
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	NPN	NPN
Maximum power dissipation(Abs)	-	35 W	15 W
Certification status	-	Not Qualified	Not Qualified
Terminal surface	-	TIN LEAD	TIN LEAD
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	-	1	1

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