ZXMN3A06DN8 datasheet, PDF - EEWORLD Datasheet

ZXMN3A06DN8: Description4900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; Categorysemiconductor Discrete semiconductor; File Size183KB，7 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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ZXMN3A06DN8 Overview

4900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Parameter Name	Attribute value
Number of terminals	8
Minimum breakdown voltage	30 V
Processing package description	SOIC-8
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of components	2
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current	4.9 A
Maximum drain on-resistance	0.0350 ohm

	ZXMN3A06DN8	ZXMN3A06DN8TC
Description	4900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	4900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals	8	8
Minimum breakdown voltage	30 V	30 V
Processing package description	SOIC-8	SOIC-8
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
China RoHS regulations	Yes	Yes
state	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	GULL WING	GULL WING
terminal coating	MATTE TIN	MATTE TIN
Terminal location	DUAL	DUAL
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of components	2	2
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Channel type	N-CHANNEL	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT
Transistor type	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current	4.9 A	4.9 A
Maximum drain on-resistance	0.0350 ohm	0.0350 ohm

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