2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
| Parameter Name | Attribute value |
| Number of terminals | 8 |
| Minimum breakdown voltage | 100 V |
| Processing package description | SO-8 |
| Lead-free | Yes |
| EU RoHS regulations | Yes |
| China RoHS regulations | Yes |
| state | ACTIVE |
| packaging shape | RECTANGULAR |
| Package Size | SMALL OUTLINE |
| surface mount | Yes |
| Terminal form | GULL WING |
| terminal coating | MATTE TIN |
| Terminal location | DUAL |
| Packaging Materials | PLASTIC/EPOXY |
| structure | SINGLE WITH BUILT-IN DIODE |
| Number of components | 1 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Channel type | N-CHANNEL |
| field effect transistor technology | METAL-OXIDE SEMICONDUCTOR |
| operating mode | ENHANCEMENT |
| Transistor type | GENERAL PURPOSE POWER |
| Maximum leakage current | 2.1 A |
| Maximum drain on-resistance | 0.2500 ohm |
| Maximum leakage current pulse | 9 A |
| ZXMN10A08DN8 | ZXMN10A08DN8TA | ZXMN10A08DN8TC | |
|---|---|---|---|
| Description | 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET | 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET | 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| Number of terminals | 8 | 8 | 8 |
| Minimum breakdown voltage | 100 V | 100 V | 100 V |
| Processing package description | SO-8 | SO-8 | SO-8 |
| Lead-free | Yes | Yes | Yes |
| EU RoHS regulations | Yes | Yes | Yes |
| China RoHS regulations | Yes | Yes | Yes |
| state | ACTIVE | ACTIVE | ACTIVE |
| packaging shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Size | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| surface mount | Yes | Yes | Yes |
| Terminal form | GULL WING | GULL WING | GULL WING |
| terminal coating | MATTE TIN | MATTE TIN | MATTE TIN |
| Terminal location | DUAL | DUAL | DUAL |
| Packaging Materials | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| structure | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Number of components | 1 | 1 | 1 |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| field effect transistor technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| operating mode | ENHANCEMENT | ENHANCEMENT | ENHANCEMENT |
| Transistor type | GENERAL PURPOSE POWER | GENERAL PURPOSE POWER | GENERAL PURPOSE POWER |
| Maximum leakage current | 2.1 A | 2.1 A | 2.1 A |
| Maximum drain on-resistance | 0.2500 ohm | 0.2500 ohm | 0.2500 ohm |
| Maximum leakage current pulse | 9 A | 9 A | 9 A |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
