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ZXMN10A08DN8TC

Description
2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size173KB,7 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

ZXMN10A08DN8TC Overview

2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET

ZXMN10A08DN8TC Parametric

Parameter NameAttribute value
Number of terminals8
Minimum breakdown voltage100 V
Processing package descriptionSO-8
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current2.1 A
Maximum drain on-resistance0.2500 ohm
Maximum leakage current pulse9 A
ZXMN10A08DN8
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 100V; R
DS(ON)
= 0.25
DESCRIPTION
I
D
= 2.1A
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SO8
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC converters
Power management functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMN10A08DN8TA
ZXMN10A08DN8TC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2,500 units
PINOUT
DEVICE MARKING
ZXMN
10A08D
Top View
ISSUE 4 - JANUARY 2005
1
SEMICONDUCTORS

ZXMN10A08DN8TC Related Products

ZXMN10A08DN8TC ZXMN10A08DN8TA ZXMN10A08DN8
Description 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals 8 8 8
Minimum breakdown voltage 100 V 100 V 100 V
Processing package description SO-8 SO-8 SO-8
Lead-free Yes Yes Yes
EU RoHS regulations Yes Yes Yes
China RoHS regulations Yes Yes Yes
state ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN MATTE TIN
Terminal location DUAL DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Number of components 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Channel type N-CHANNEL N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Maximum leakage current 2.1 A 2.1 A 2.1 A
Maximum drain on-resistance 0.2500 ohm 0.2500 ohm 0.2500 ohm
Maximum leakage current pulse 9 A 9 A 9 A
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