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T9G0201203DH

Description
Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, T9G, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size487KB,4 Pages
ManufacturerPOWEREX
Websitehttp://www.pwrx.com/Home.aspx
Environmental Compliance  
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T9G0201203DH Overview

Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, T9G, 3 PIN

T9G0201203DH Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPOWEREX
package instructionDISK BUTTON, O-CEDB-N2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time350 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage300 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
JESD-30 codeO-CEDB-N2
Maximum leakage current75 mA
On-state non-repetitive peak current27000 A
Number of components1
Number of terminals2
Maximum on-state current1200000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current1884 A
Off-state repetitive peak voltage2000 V
Repeated peak reverse voltage2000 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR

T9G0201203DH Related Products

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Description Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, T9G, 3 PIN Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, T9G, 3 PIN Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element, T9G, 3 PIN
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker POWEREX POWEREX POWEREX
package instruction DISK BUTTON, O-CEDB-N2 DISK BUTTON, O-CEDB-N2 DISK BUTTON, O-CEDB-N2
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Nominal circuit commutation break time 350 µs 350 µs 350 µs
Configuration SINGLE SINGLE SINGLE
Critical rise rate of minimum off-state voltage 300 V/us 300 V/us 300 V/us
Maximum DC gate trigger current 200 mA 200 mA 200 mA
Maximum DC gate trigger voltage 3 V 3 V 3 V
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Maximum leakage current 75 mA 75 mA 75 mA
On-state non-repetitive peak current 27000 A 27000 A 27000 A
Number of components 1 1 1
Number of terminals 2 2 2
Maximum on-state current 1200000 A 1200000 A 1200000 A
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 1884 A 1884 A 1884 A
Off-state repetitive peak voltage 2000 V 1800 V 2200 V
Repeated peak reverse voltage 2000 V 1800 V 2200 V
surface mount YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location END END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR SCR
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