Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element, T9G, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | POWEREX |
| package instruction | DISK BUTTON, O-CEDB-N2 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Nominal circuit commutation break time | 350 µs |
| Configuration | SINGLE |
| Critical rise rate of minimum off-state voltage | 300 V/us |
| Maximum DC gate trigger current | 200 mA |
| Maximum DC gate trigger voltage | 3 V |
| JESD-30 code | O-CEDB-N2 |
| Maximum leakage current | 75 mA |
| On-state non-repetitive peak current | 27000 A |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum on-state current | 1200000 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum rms on-state current | 1884 A |
| Off-state repetitive peak voltage | 2200 V |
| Repeated peak reverse voltage | 2200 V |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | END |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Trigger device type | SCR |
| T9G0221203DH | T9G0181203DH | T9G0201203DH | |
|---|---|---|---|
| Description | Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element, T9G, 3 PIN | Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, T9G, 3 PIN | Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, T9G, 3 PIN |
| Is it lead-free? | Lead free | Lead free | Lead free |
| Is it Rohs certified? | conform to | conform to | conform to |
| Maker | POWEREX | POWEREX | POWEREX |
| package instruction | DISK BUTTON, O-CEDB-N2 | DISK BUTTON, O-CEDB-N2 | DISK BUTTON, O-CEDB-N2 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Nominal circuit commutation break time | 350 µs | 350 µs | 350 µs |
| Configuration | SINGLE | SINGLE | SINGLE |
| Critical rise rate of minimum off-state voltage | 300 V/us | 300 V/us | 300 V/us |
| Maximum DC gate trigger current | 200 mA | 200 mA | 200 mA |
| Maximum DC gate trigger voltage | 3 V | 3 V | 3 V |
| JESD-30 code | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 |
| Maximum leakage current | 75 mA | 75 mA | 75 mA |
| On-state non-repetitive peak current | 27000 A | 27000 A | 27000 A |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 |
| Maximum on-state current | 1200000 A | 1200000 A | 1200000 A |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -40 °C | -40 °C | -40 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND | ROUND | ROUND |
| Package form | DISK BUTTON | DISK BUTTON | DISK BUTTON |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Maximum rms on-state current | 1884 A | 1884 A | 1884 A |
| Off-state repetitive peak voltage | 2200 V | 1800 V | 2000 V |
| Repeated peak reverse voltage | 2200 V | 1800 V | 2000 V |
| surface mount | YES | YES | YES |
| Terminal form | NO LEAD | NO LEAD | NO LEAD |
| Terminal location | END | END | END |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Trigger device type | SCR | SCR | SCR |
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