CJD122TR13LEADFREE datasheet, PDF

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CJD122TR13LEADFREE: DescriptionPower Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,; CategoryDiscrete semiconductor The transistor; File Size40KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CJD122TR13LEADFREE Overview

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,

CJD122TR13LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-based maximum capacity	200 pF
Collector-emitter maximum voltage	100 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	100
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	20 W
Maximum power dissipation(Abs)	20 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
VCEsat-Max	4 V

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Description	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,
Is it lead-free?	Lead free	Contains lead	Lead free	Contains lead	Lead free	Lead free	Contains lead	Contains lead
Is it Rohs certified?	conform to	incompatible	conform to	incompatible	conform to	conform to	incompatible	incompatible
Reach Compliance Code	compliant	not_compliant	compliant	not_compliant	compliant	compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	8 A	8 A	8 A	8 A	8 A	8 A	8 A	8 A
Collector-based maximum capacity	200 pF	300 pF	300 pF	300 pF	300 pF	200 pF	200 pF	200 pF
Collector-emitter maximum voltage	100 V	100 V	100 V	100 V	100 V	100 V	100 V	100 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	100	100	100	100	100	100	100	100
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e0	e3	e0	e3	e3	e0	e0
Number of components	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	260	NOT SPECIFIED	260	260	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	PNP	PNP	PNP	PNP	NPN	NPN	NPN
Maximum power consumption environment	20 W	20 W	20 W	20 W	20 W	20 W	20 W	20 W
Maximum power dissipation(Abs)	20 W	20 W	20 W	20 W	20 W	20 W	20 W	20 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	NOT SPECIFIED	10	NOT SPECIFIED	10	10	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	4 MHz	4 MHz	4 MHz	4 MHz	4 MHz	4 MHz	4 MHz	4 MHz
VCEsat-Max	4 V	4 V	4 V	4 V	4 V	4 V	4 V	4 V
Maker	Central Semiconductor	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor

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