Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin,
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 8 A |
| Collector-based maximum capacity | 300 pF |
| Collector-emitter maximum voltage | 100 V |
| Configuration | DARLINGTON |
| Minimum DC current gain (hFE) | 100 |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | PNP |
| Maximum power consumption environment | 20 W |
| Maximum power dissipation(Abs) | 20 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 10 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 4 MHz |
| VCEsat-Max | 4 V |
| Base Number Matches | 1 |
| CJD127BKLEADFREE | CJD127BK | CJD127TR13 | CJD127TR13LEADFREE | CJD122BKLEADFREE | CJD122TR13 | CJD122TR13LEADFREE | CJD122BK | |
|---|---|---|---|---|---|---|---|---|
| Description | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, |
| Is it lead-free? | Lead free | Contains lead | Contains lead | Lead free | Lead free | Contains lead | Lead free | Contains lead |
| Is it Rohs certified? | conform to | incompatible | incompatible | conform to | conform to | incompatible | conform to | incompatible |
| Reach Compliance Code | compliant | not_compliant | not_compliant | compliant | compliant | not_compliant | compliant | not_compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 8 A | 8 A | 8 A | 8 A | 8 A | 8 A | 8 A | 8 A |
| Collector-based maximum capacity | 300 pF | 300 pF | 300 pF | 300 pF | 200 pF | 200 pF | 200 pF | 200 pF |
| Collector-emitter maximum voltage | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Configuration | DARLINGTON | DARLINGTON | DARLINGTON | DARLINGTON | DARLINGTON | DARLINGTON | DARLINGTON | DARLINGTON |
| Minimum DC current gain (hFE) | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609 code | e3 | e0 | e0 | e3 | e3 | e0 | e3 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | NOT SPECIFIED | NOT SPECIFIED | 260 | 260 | NOT SPECIFIED | 260 | NOT SPECIFIED |
| Polarity/channel type | PNP | PNP | PNP | PNP | NPN | NPN | NPN | NPN |
| Maximum power consumption environment | 20 W | 20 W | 20 W | 20 W | 20 W | 20 W | 20 W | 20 W |
| Maximum power dissipation(Abs) | 20 W | 20 W | 20 W | 20 W | 20 W | 20 W | 20 W | 20 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES | YES | YES |
| Terminal surface | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | 10 | NOT SPECIFIED | NOT SPECIFIED | 10 | 10 | NOT SPECIFIED | 10 | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 4 MHz | 4 MHz | 4 MHz | 4 MHz | 4 MHz | 4 MHz | 4 MHz | 4 MHz |
| VCEsat-Max | 4 V | 4 V | 4 V | 4 V | 4 V | 4 V | 4 V | 4 V |
| Maker | - | - | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD