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2SK2369-A

Description
2SK2369-A
CategoryDiscrete semiconductor    The transistor   
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SK2369-A Overview

2SK2369-A

2SK2369-A Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeMP-88
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging codePRSS0004ZS-A3
Reach Compliance Codeunknow
Other featuresHIGH VOLTAGE, AVALANCHE RATING
Avalanche Energy Efficiency Rating (Eas)285 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage450 V
Maximum drain current (Abs) (ID)20 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.35 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)140 W
Maximum pulsed drain current (IDM)80 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

2SK2369-A Related Products

2SK2369-A 2SK23670 2SK2370-A 2SK2370
Description 2SK2369-A 20A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, MP-88, 3 PIN 2SK2370-A TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,20A I(D),TO-247VAR
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 ,
Reach Compliance Code unknow unknow compli unknow
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE Single
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
surface mount NO NO NO NO
Base Number Matches 1 1 1 1
Is it Rohs certified? conform to - conform to incompatible
Parts packaging code MP-88 TO-3P MP-88 -
Contacts 3 3 3 -
Avalanche Energy Efficiency Rating (Eas) 285 mJ 285 mJ 285 mJ -
Shell connection DRAIN DRAIN DRAIN -
Minimum drain-source breakdown voltage 450 V 500 V 500 V -
Maximum drain current (Abs) (ID) 20 A - 20 A 20 A
Maximum drain current (ID) 20 A 20 A 20 A -
Maximum drain-source on-resistance 0.35 Ω 0.4 Ω 0.4 Ω -
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 -
Number of components 1 1 1 -
Number of terminals 3 3 3 -
Maximum operating temperature 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
Maximum power dissipation(Abs) 140 W - 140 W 140 W
Maximum pulsed drain current (IDM) 80 A 80 A 80 A -
Certification status Not Qualified Not Qualified Not Qualified -
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE SINGLE -
transistor applications SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON -
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