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NT256S64V88A0G-8B

Description
Synchronous DRAM Module, 32MX64, 6ns, CMOS, DIMM-168
Categorystorage    storage   
File Size145KB,10 Pages
ManufacturerNanya
Websitehttp://www.nanya.com/cn
Nanya Technology Co., Ltd. aims to become the best DRAM (dynamic random access memory) supplier. It emphasizes customer service and strengthens product R&D and manufacturing through close cooperation with partners, thereby providing customers with comprehensive products and system solutions. In the face of the growing niche DRAM market, Nanya Technology not only provides products ranging from 128Mb to 8Gb, but also continues to expand product diversification. The main application markets include digital TV, set-top box (STB), network communication, tablet computer and other smart electronic systems, automotive and industrial products. At the same time, in order to meet the needs of the rapidly growing mobile and wearable device market, Nanya Technology is more focused on the research and development and manufacturing of low-power memory products. In recent years, Nanya Technology has actively operated in the niche memory market, focusing on the research and development of low-power and customized core product lines. In terms of process progress, it has also introduced 20nm process technology and is committed to the production of DDR4 and LPDDR4 products, hoping to further enhance its overall competitiveness. Nanya Technology will also continue to strengthen its high value-added niche memory products and perfect customer service, enhance core business operating performance, ensure the rights and interests of all shareholders, and create sustainable business value for the company.
Download Datasheet Parametric View All

NT256S64V88A0G-8B Overview

Synchronous DRAM Module, 32MX64, 6ns, CMOS, DIMM-168

NT256S64V88A0G-8B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerNanya
Parts packaging codeDIMM
package instruction,
Contacts168
Reach Compliance Codecompliant
ECCN codeEAR99
access modeSINGLE BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N168
JESD-609 codee4
memory density2147483648 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals168
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX64
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

NT256S64V88A0G-8B Preview

Download Datasheet
NT256S64V88A0G
256MB : 32M x 64
Unbuffered SDRAM Module
32Mx64 bit One Bank Unbuffered SDRAM Module
based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
Features
l
l
168-Pin Unbuffered 8-Byte Dual In-Line Memory Module
Intended for PC133 applications
- Clock Frequency: 133MHz
- Clock Cycle: 7.5ns
- Clock Assess Time: 5.4ns
l
l
l
l
l
l
l
l
Inputs and outputs are LVTTL (3.3V) compatible
Single 3.3V
±
0.3V Power Supply
Single Pulsed RAS interface
SDRAMs have 4 internal banks
Module has 1 physical bank
Fully Synchronous to positive Clock Edge
Data Mask for Byte Read/Write control
Auto Refresh (CBR) and Self Refresh
l
l
l
l
l
l
l
Automatic and controlled Precharge commands
Programmable Operation:
- CAS Latency: 2, 3
- Burst Type: Sequential or Interleave
- Burst Length: 1, 2, 4, 8
- Operation: Burst Read and Write or Multiple Burst Read with
Single Write
Suspend Mode and Power Down Mode
8192 Refresh cycles distributed across 64ms
Gold contacts
SDRAMs in TSOP Type II Package
Serial Presence Detect with Write Protect
Description
NT256S64V88A0G is unbuffered 168-pin Synchronous DRAM Dual In-Line Memory Modules (DIMM) which is organized as 16Mx64
high-speed memory arrays and is configured as one 16M x 64 physical bank. The DIMM uses eight 32Mx8 SDRAMs in 400mil TSOP II
packages. The DIMM achieves high-speed data transfer rates of up to 133MHz by employing a prefetch / pipeline hybrid architecture that
supports the JEDEC 1N rule while allowing very low burst power.
All control, address, and data input/output circuits are synchronized with the positive edge of the externally supplied clock inputs.
All inputs are sampled at the positive edge of each externally supplied clock (CK0, CK2). Internal operating modes are defined by combinations
of
RAS
,
CAS
,
WE
,
S0
/
S2
, DQMB, and CKE0 signals. A command decoder initiates the necessary timings for each operation. A 15-bit
address bus accepts address information in a row / column multiplexing arrangement.
Prior to any Access operation, the
CAS
latency, burst type, burst length, and Burst operation type must be programmed into the DIMM by
address inputs A0-A9 during the Mode Register Set cycle. The DIMM uses serial presence detects implemented via a serial EEPROM using
the two-pin IIC protocol. The first 128 bytes of serial PD data are used by the DIMM manufacturer. The last 128 bytes are available to the
customer.
Ordering Information
Speed
Part Number
Organization
MHz.
143MHz
NT256S64V88A0G-7K
133MHz
133MHz
NT256S64V88A0G-75B
32Mx64
100MHz
125MHz
NT256S64V88A0G-8B
100MHz
* CL = CAS Latency
2
2
2
2
3
2
3
2
3
2
3
2
3
2
3
Gold
3.3V
CL
3
t RCD
3
t RP
3
Leads
Power
Preliminary
08 / 2001
1
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
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