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SSG55N60/3

Description
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size196KB,3 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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SSG55N60/3 Overview

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel

SSG55N60/3 Parametric

Parameter NameAttribute value
MakerSSDI
Reach Compliance Codecompliant
Maximum collector current (IC)55 A
Collector-emitter maximum voltage600 V
Gate emitter threshold voltage maximum6 V
Gate-emitter maximum voltage20 V
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)195 W
surface mountNO
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