Power Bipolar Transistor
| Parameter Name | Attribute value |
| Maker | SSDI |
| package instruction | FLANGE MOUNT, S-XSFM-P3 |
| Reach Compliance Code | compliant |
| Maximum collector current (IC) | 5 A |
| Collector-based maximum capacity | 250 pF |
| Collector-emitter maximum voltage | 225 V |
| Configuration | Single |
| Minimum DC current gain (hFE) | 9 |
| Maximum landing time (tf) | 800 ns |
| JEDEC-95 code | TO-254AA |
| JESD-30 code | S-XSFM-P3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 200 °C |
| Minimum operating temperature | -65 °C |
| Package body material | UNSPECIFIED |
| Package shape | SQUARE |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 39 W |
| Maximum rise time (tr) | 750 ns |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 20 MHz |
| Maximum off time (toff) | 5800 ns |
| VCEsat-Max | 2.5 V |
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