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HM51W16165ALJ-6

Description
EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
Categorystorage    storage   
File Size422KB,36 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HM51W16165ALJ-6 Overview

EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42

HM51W16165ALJ-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
Parts packaging codeSOJ
package instructionSOJ, SOJ42,.44
Contacts42
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J42
JESD-609 codee0
length27.06 mm
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals42
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ42,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height3.76 mm
self refreshYES
Maximum standby current0.00015 A
Maximum slew rate0.1 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
width10.16 mm
HM51W16165A Series
HM51W18165A Series
1048576-word
×
16-bit Dynamic Random Access Memory
ADE-203-372B (Z)
Rev. 2.0
Jul. 2, 1996
Description
The Hitachi HM51W16165A Series, HM51W18165A Series are CMOS dynamic RAMs organized as
1,048,576-word
×
16-bit. They employ the most advanced CMOS technology for high performance
and low power. HM51W16165A Series, HM51W18165A Series offer Extended Data Out (EDO) Page
Mode as a high speed access mode.
Features
Single 3.3 V (±0.3 V)
High speed
Access time: 60 ns/70 ns/80 ns (max)
Low power dissipation
Active mode : 468 mW/414 mW/360 mW (max) (HM51W16165A Series)
: 666 mW/594 mW/540 mW (max) (HM51W18165A Series)
Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
EDO page mode capability
Long refresh period
4096 refresh cycles : 64 ms (HM51W16165A Series)
: 128 ms (L-version)
1024 refresh cycles : 16 ms (HM51W18165A Series)
: 128 ms (L-version)
This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS
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