The AS6VA5128 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288
words × 8 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 55 ns are ideal for low-power applications. Active high and low chip
selects (CS) permit easy memory expansion with multiple-bank memory systems.
When CS is high, the device enters standby mode: the AS6VA5128 is guaranteed not to exceed 66
µ
W power consumption at
3.3V and 55ns. The device also returns data when V
CC
is reduced to 1.5V for even lower power consumption.
A write cycle is accomplished by asserting write enable (WE) and chip select (CS) low. Data on the input pins I/O1–I/O8 is
written on the rising edge of WE (write cycle 1) or CS (write cycle 2). To avoid bus contention, external devices should drive
I/O pins only after outputs have been disabled with output enable ( OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE), chip select (CS), with write enable (WE) High. The chip drives
I/O pins with the data word referenced by the input address. When either chip select or output enable is inactive, or write
enable is active, output drivers stay in high-impedance mode.
All chip inputs and outputs are CMOS-compatible, and operation is from a single 2.7V to 3.3V supply. The device is available in
the JEDEC standard 32-pin TSOP I, 32-pin sTSOP I, 400-mL TSOP II, and 36(48)-ball FBGA packages.
Absolute maximum ratings
Parameter
Voltage on V
CC
relative to V
SS
Voltage on any I/O pin relative to GND
Power dissipation
Storage temperature (plastic)
Temperature with V
CC
applied
DC output current (low)
Device
Symbol
V
tIN
V
tI/O
P
D
T
stg
T
bias
I
OUT
Min
–0.5
–0.5
–
–65
–55
–
1.0
+150
+125
20
Max
V
CC
+ 0.5
Unit
V
V
W
°
C
°
C
mA
Note: Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specificati on is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CS
H
L
L
L
L
WE
X
X
H
H
L
OE
X
X
H
L
X
Supply Current
I
SB
I
SB
I
CC
I
CC
I
CC
I/O1–I/O8
High Z
High Z
High Z
D
OUT
D
IN
Mode
Standby (I
SB
)
Standby (I
SB
)
Output disable (I
CC
)
Read (I
CC
)
Write (I
CC
)
Key: X = Don’t care, L = Low, H = High.
2
ALLIANCE SEMICONDUCTOR
7/14/00
AS6VA5128
®
Recommended operating condition (over the operating range)
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