TGL41-6.8 thru TGL41-200A
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Plastic MELF package
• Ideal for automated placement
• Glass passivated chip junction
• Available in Unidirectional polarity only
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 % (200 W above 91 V)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Typical I
D
less than 1 µA above 10 V rating
• Meets MSL level 1, per J-STD-020C, LF max peak
of 250 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of
sensor units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case:
DO-213AB (GL41)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity:
Blue band denotes the cathode which is
positive with respect to the anode under normal TVS
operation.
DO-213AB (GL41)
MAJOR RATINGS AND CHARACTERISTICS
V
BR
P
PPM
P
D
I
FSM
T
j
max.
6.8 V to 200 V
400 W, 200 W
1.0 W
40 A
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
Power dissipation on infinite heatsink at T
L
= 75 °C
Peak pulse current with a 10/1000 µs waveform
(1)
SYMBO
P
PPM
P
D
(Fig. 3)
(2)
VALUE
Minimum 400
1.0
see next table
40
3.5
- 55 to + 150
UNIT
W
W
A
A
V
°C
I
PPM
I
FSM
V
F
T
J
, T
STG
Peak forward surge current, 8.3 ms single half sine-wave unidirectional only
Maximum instantaneous forward voltage at 25 A for unidirectional only
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2. Rating is 200 W above 91 V
(2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum
Document Number 88403
05-Sep-06
www.vishay.com
1
TGL41-6.8 thru TGL41-200A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAGE
V
BR
(V)
(1)
MIN
TGL41-51
TGL41-51A
TGL41-56
TGL41-56A
TGL41-62
TGL41-62A
TGL41-68
TGL41-68A
TGL41-75
TGL41-75A
TGL41-82
TGL41-82A
TGL41-91
TGL41-91A
TGL41-100
TGL41-100A
TGL41-110
TGL41-110A
TGL41-120
TGL41-120A
TGL41-130
TGL41-130A
TGL41-150
TGL41-150A
TGL41-160
TGL41-160A
TGL41-170
TGL41-170A
TGL41-180
TGL41-180A
TGL41-200
TGL41-200A
Note:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
MAX
56.1
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
TEST
CURRENT
AT I
T
(mA)
STAND-
OFF
VOLTAGE
V
WM
(V)
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
MAXIMUM
PEAK
PULSE
CURRENT
I
PPM
(A)
(2)
5.4
5.7
5.0
5.2
4.5
4.7
4.1
4.3
3.7
3.9
3.4
3.5
3.1
3.2
1.39
1.46
1.27
1.32
1.16
1.21
1.07
1.12
0.93
0.97
0.87
0.91
0.82
0.85
0.78
0.81
0.70
0.73
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V
BR
(%/°C)
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.109
0.109
0.109
0.109
0.110
0.110
0.110
0.110
0.110
0.110
0.111
0.111
0.111
0.111
0.111
0.111
0.111
0.111
0.111
0.111
ORDERING INFORMATION
PREFERRED P/N
TGL41-6.8A-E3/96
TGL41-6.8A-E3/97
UNIT WEIGHT (g)
0.134
0.134
PREFERRED PACKAGE CODE
96
97
BASE QUANTITY
1500
5000
DELIVERY MODE
7" Diameter Plastic Tape & Reel
13" Diameter Plastic Tape & Reel
Document Number 88403
05-Sep-06
www.vishay.com
3
TGL41-6.8 thru TGL41-200A
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise specified)
100
10000
Non-repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
TGL41-6.8
TGL91A
Measured at
Zero Bias
P
PPM
- Peak Pulse Power (kW)
C
J
- Junction Capacitance (pF)
1000
Measured at Stand-off
Voltage V
WM
100
T
j
= 25 °C
f = 1.0 MHz
V
sq
= 50 mVp-p
10
1.0
10
1.0
TGL41-100
TGL200A
Unidirectional
100
200
0.1
0.1
µs
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
td - Pulse
Width
(s)
V
(BR)
- Breakdown
Voltage
(V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
1.00
75
P
D
, Power Dissipation (W)
0
25
50
75
100
125
150
175
200
0.75
50
0.50
25
0.25
0
0
0
25
50
75
100
125
150
175
200
T
J
- Initial Temperature (°C)
T
L
, Lead Temperature (°C)
Figure 2. Pulse Power or Current versus Initial Junction Temperature
Figure 5. Power Derating Curve
150
50
I
PPM
- Peak Pulse Current,
%
I
RSM
Peak Forward Surge Current (A)
tr = 10
µsec
Peak
Value
I
PPM
T
j
= 25 °C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50
%
of I
PPM
T
j
= T
j
max.
8.3
ms Single Half Sine-Wave
40
100
30
Half
Value
- IPP
2
I
PPM
50
10/1000
µsec Waveform
as defined
by
R.E.A.
20
10
td
0
0
1.0
2.0
3.0
4.0
0
1
10
100
t - Time (ms)
Number
of Cycles at 60 Hz
Figure 3. Pulse Waveform
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
Unidirectional Only
www.vishay.com
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Document Number 88403
05-Sep-06
MEMS sensors
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