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LL43

Description
SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size84KB,1 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Download Datasheet Parametric Compare View All

LL43 Overview

SILICON, SIGNAL DIODE

LL43 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeRECTIFIER DIODE
Certificate TH97/10561QM
Certificate TW00/17276EM
LL42 - LL43
FEATURES :
• For general purpose applications.
• This diode features very low turn-on voltage and
fast switching. This device is protected by a PN
junction guard ring against excessive voltage, such
as electrostatic discharges
• These diodes are also available in the DO-35
case with type designations BAT42 to BAT43
• Pb / RoHS Free
SCHOTTKY BARRIER DIODES
MiniMELF (SOD-80C)
Cathode Mark
φ
0.063 (1.64)
0.055 (1.40)
0.142(3.6)
0.134(3.4)
0.019(0.48)
0.011(0.28)
Mounting Pad Layout
0.098 (2.50)
Max.
MECHANICAL DATA :
Case:
MiniMELF Glass Case (SOD-80C)
Weight:
approx. 0.05g
0.049 (1.25)Min.
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
Repetitive Peak Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current at tp < 1s,
Forward Surge Current at tp < 10 ms,
Power Dissipation ,Ta = 65 °C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Ambient Operating Temperature Range
Storage temperature range
Note:
(1) Valid provided that electrodes are kept at ambient temperature
25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
D
R
θ
JA
T
J
Ta
T
S
Value
30
200
(1)
500
(1)
4
(1)
200
(1)
300
(1)
125
-55 to + 125
-65 to + 150
Unit
V
mA
mA
A
mW
°C/W
°C
°C
°C
Electrical Characteristics
Parameter
Reverse Breakdown Voltage
Reverse Current
Pulse Test tp <300μs ,
δ
<2%
Forward Voltage
Pulse Test tp <300μs ,
δ
<2%
(T
J
= 25 °C unless otherwise noted)
Symbol
V
(BR)R
I
R
LL42 , LL43
LL42
LL42
LL43
LL43
Test Condition
I
R
= 100
μA
(pulsed)
V
R
= 25 V
V
R
= 25 V , T
J
= 100 °C
I
F
= 200mA
I
F
= 10mA
I
F
= 50mA
I
F
= 2mA
I
F
= 15mA
V
R
= 1V, f = 1MHz
I
F
= 10mA, I
R
= 10mA ,
to I
R
= 1mA, R
L
= 100
Min
30
-
-
-
-
-
0.26
-
-
-
Typ
-
-
-
-
-
-
-
-
7
-
Max
-
1.0
100
1.00
0.40
0.65
0.33
0.45
-
5
Unit
V
µA
V
F
V
Diode Capacitance
Reverse Recovery Time
Cd
Trr
pF
ns
Page 1 of 1
Rev. 04 : September 14, 2007

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