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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ
PA2350T1P
OUTLINE DRAWING (Unit: mm)
TOP VIEW
1.62
±
0.05
BOTTOM VIEW
0.65
DUAL Nch MOSFET
FOR SWITCHING
DESCRIPTION
The
μ
PA2350T1P is a Dual N-channel MOSFET designed for
Lithium-Ion battery protection circuit.
Ecologically Flip chip MOSFET for Lithium-Ion battery Protection
(EFLIP).
1.62
±
0.05
FEATURES
•
Monolithic Dual MOSFET
The Drain connection on circuit board is unnecessary, because
Drains of 2MOSFET are internally connected.
2.5 V drive available and low on-state resistance
R
SS(on)1
= 35 mΩ MAX. (V
GS
= 4.5 V, I
S
= 3.0 A)
R
SS(on)2
= 37 mΩ MAX. (V
GS
= 4.0 V, I
S
= 3.0 A)
R
SS(on)3
= 44 mΩ MAX. (V
GS
= 3.1 V, I
S
= 3.0 A)
R
SS(on)4
= 55 mΩ MAX. (V
GS
= 2.5 V, I
S
= 3.0 A)
Built-in G-S protection diode against ESD
Pb-free Bump
G2
S2
0.65
G1
S1
•
1-pin index mark S1
Dot area (For in-house)
4 -
φ
0.3
S1: Source 1
G1: Gate 1
G2: Gate 2
S2: Source 2
0.2
±
0.05
•
•
ORDERING INFORMATION
PART NUMBER
PACKAGE
4-pin EFLIP-LGA
μ
PA2350T1P-E4-A
Note
Note
Pb-free (This product does not contain Pb in external electrode and other parts.)
Remark
"-E4" indicates the unit orientation (E4 only).
EQUIVALENT CIRCUIT
FET1
Gate1
FET2
Gate2
Gate
Protection
Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Source to Source Voltage (V
GS
= 0 V)
V
SSS
20
Gate to Source Voltage (V
SS
= 0 V)
V
GSS
±12
Note1
Source Current (DC)
6.0
I
S(DC)
Note2
Source Current (pulse)
±60
I
S(pulse)
Note1
Total Power Dissipation
1.3
P
T
Channel Temperature
T
ch
150
Storage Temperature
T
stg
−55
to +150
2
Notes 1.
Mounted on ceramic board of 50 cm x 1.0 mm
2.
PW
≤
100
μ
s, Single Pulse
V
V
A
A
W
°C
°C
Source1
Body Diode
Source2
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19739EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
2009
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EEWORLD
