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2SB1277TL2Q

Description
Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, FTL, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size129KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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2SB1277TL2Q Overview

Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, FTL, 3 PIN

2SB1277TL2Q Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1

2SB1277TL2Q Related Products

2SB1277TL2Q 2SB1277TL2/Q 2SB911M/Q 2SB1188T100 2SB822/Q 2SB1277TL2
Description Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, FTL, 3 PIN 2000mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR 2000mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon 2000mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-F3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknow unknow unknow compli unknow unknow
Maximum collector current (IC) 2 A 2 A 2 A 2 A 2 A 2 A
Collector-emitter maximum voltage 32 V 32 V 32 V 32 V 32 V 32 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 120 120 82 120 82
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSSO-F3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE SMALL OUTLINE IN-LINE IN-LINE
Polarity/channel type PNP PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO YES NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE FLAT THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz - 100 MHz 100 MHz
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C -
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